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NTR4501N, NVR4501N
Electrical Characteristics (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
20
24.5
22
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 16 V
T J = 25 ° C
T J = 85 ° C
1.5
10
m A
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
± 100
nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 3)
Negative Threshold
Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
0.65
? 2.3
1.2
V
mV/ ° C
Drain ? to ? Source On Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 4.5 V, I D = 3.6 A
V GS = 2.5 V, I D = 3.1 A
V DS = 5.0 V, I D = 3.6 A
70
88
9
80
105
m W
S
CHARGES AND CAPACITANCES
Input Capacitance
C iss
200
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate ? to ? Source Gate Charge
Gate ? to ? Drain Charge
C oss
C rss
Q G(TOT)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = 10 V
V GS = 4.5 V, V DS = 10 V,
I D = 3.6 A
80
50
2.4
0.5
0.6
6.0
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
6.5
13
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 10 V,
I D = 3.6 A, R G = 6.0 W
12
12
3
24
24
6
ns
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I SD = 1.6 A
0.8
1.2
V
Reverse Recovery Time
t RR
7.1
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V,
d IS /d t = 100 A/ m s,
I S = 1.6 A
5
1.9
3.0
ns
nC
3. Pulse Test: Pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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